ssf 550 8 a ? silikron semiconductor co.,ltd. 20 1 1 . 01 . 12 version : 3 . 6 page 1 of 6 www.silikron.com main product characteristics: v dss 55 v r ds (on) 4.5 mohm typ i d 110 a features and benefits : ssf 5508 a top view (to2 63 ) ? advanced trench mosfet process technology ? special designed for c onvertors and power controls ? u ltra low on - resistance ? 1 7 5 operating temperature ? high avalanche capability and 100% tested description : it utilizes the latest trench processing techniques to ach ieve the high cell density and reduces the on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications absolute max rating : symbol parameter max. units id @ tc = 25c continuous drain current, vgs @ 10v 1 10 a id @ tc = 100c continuous drain current, vgs @ 10v 80 idm pulsed drain current 4 40 ism pulsed source current.(body diode) 4 40 pd @tc = 25c power dissipation 2 05 w linear derating factor 2 w / c ? v ds drain - source voltage 55 v vgs gate - to - source voltage 2 0 v dv/dt peak diode recovery voltage 3 5 v/ns eas single pulse avalanche energy @ l=0.3 mh 634 mj iar avalanche current @ l=0. 3 mh 65 a tj tstg operating junction and storage temperature range - 55 to + 1 75 c thermal resistance symbol ch aracterizes value unit r jc junction - to - case 0.7 3 /w r j a junction - to - ambient ( t 10s ) 50 /w
ssf 550 8 a ? silikron semiconductor co.,ltd. 20 1 1 . 01 . 12 version : 3 . 6 page 2 of 6 www.silikron.com electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions bvdss drain - to - source break down voltage 55 6 0 v vgs = 0v, id = 250a rds(on) static drain - to - source on - resistance 4. 5 6 m vgs = 10v, id = 20 a vgs(th) gate threshold voltage 2 3 .1 4 v vds = vgs, id = 250a idss drain - to - source leakage current 1 a vds = 55 v, vgs = 0v 10 vds = 55 v, vgs = 0v, tj = 150 c igss gate - to - source forward leakage 1 00 na vgs = 20 v gate - to - source reverse leakage - 1 00 vgs = - 20 v qg total gate charge 12 5 1 4 7 nc id=30a vdd=30v vgs=10v qgs gate - to - source charge 24 30 qgd gate - to - drain("miller") charge 4 9 61 qg(th) gate charge at shreshold 16 20 vplateau gate plateau voltage 4.7 6 v td(on) turn - on delay time 20 ns vdd=30v id=2a ,rl =15 rg=2.5 vgs=10v tr rise time 19 td(off) turn - off delay time 70 tf fall time 30 ciss input capacitance 5607 pf vgs = 0v , vds = 25 v , ? = 1.0mhz coss output capacitance 463 crss reverse transfer capacitance 454 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions is maximum body - diode continuous curren 1 1 0 a vsd diode forward voltage 0.77 1 v is= 40 a, vgs=0v t rr reverse recovery time 36 n s tj = 2 5c, if = 68 a, , di/dt = 1 00a/s qrr reverse recovery charge 57 nc ton forward turn - on time intrinsic turn - on time is negligible (turn - on is dominated by ls+ld)
ssf 550 8 a ? silikron semiconductor co.,ltd. 20 1 1 . 01 . 12 version : 3 . 6 page 3 of 6 www.silikron.com t ypical electrical and thermal characteristics figure 1: typical output characteristics figure 2: typical transfer characteristics figure 3: on - resistance vs. drain current and figure 4: on - resistance vs. junction temperature gate voltage figure 5: on - resistance vs. gate - source voltage figure 6: body - diode characteristics 10v 7v 6v 3.5v 4v 4.5v 5v 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vds,drain to source voltage(v) id,drain current(a) 125 25 vds=vgs 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 vgs,gate to source voltage(v) id,drain to source current(a) vgs=7v vgs=10v 3 4 5 6 0 5 10 15 20 25 30 id,drain current(a) rdson,drain-to-source on resistance(normalized) vgs=10v id=20a vgs=7v id=20a 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 25 50 75 100 125 150 175 200 tj,junction temperature(c) rdson,drain-to-source on resistance(normalized) 125 25 id=20a 0 5 10 15 20 25 2 3 4 5 6 7 8 9 10 vgs,gate to source voltage(v) rdson,drain-to-source on resistance(normalized) 125 25 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 vsd,source to drain voltage(v) is,source to drain current(a)
ssf 550 8 a ? silikron semiconductor co.,ltd. 20 1 1 . 01 . 12 version : 3 . 6 page 4 of 6 www.silikron.com t ypical electrical and thermal characteristics figure 7: gate - charge characteristics figure figure 8: capacitance characteristics figure 9: maximum forward biased safe figure 10: single pulse power rating operating area( figure 1 1 : power de - rating ( 10us 100us 1ms 10ms dc ron limited tj(max )=150 tc =25 0.1 1 10 100 1000 0.01 0.1 1 10 100 vds,drain to source voltage(v) id,drain current(a)
ssf 550 8 a ? silikron semiconductor co.,ltd. 20 1 1 . 01 . 12 version : 3 . 6 page 5 of 6 www.silikron.com t ypical electrical and thermal characteristics figure 1 3 : transient thermal impedance curve n otes: the maximum current rating is limited by bond - wires. repetitive rating; pulse width limited by max. junction temperature. eas starting , id=65a . the power dissipation pd is based on max. junction temperature , u sing junc tion - to - case thermal resistance . the value of r j a is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c switch waveforms
ssf 550 8 a ? silikron semiconductor co.,ltd. 20 1 1 . 01 . 12 version : 3 . 6 page 6 of 6 www.silikron.com to - 2 63 mechanical data:
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